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BT169 Datasheet(PDF) 2 Page - Unisonic Technologies |
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BT169 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page BT169 SCR UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R301-015,C QUICK REFERENCE DATA BT169B BT169D BT169E BT169G BT169H UNIT PARAMETER SYMBOL MAX MAX MAX MAX MAX MAX Repetitive Peak Off-State Voltages VDRM, VRRM 200 400 500 600 800 V Average On-State Current IT(AV) 0.5 0.5 0.5 0.5 0.5 A RMS On-State Current IT(RMS) 0.8 0.8 0.8 0.8 0.8 A Non-Repetitive Peak On-State Current ITSM 8 8 8 8 8 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT BT169B 200 BT169D 400 BT169E 500 BT169G 600 Repetitive Peak Off-State Voltages(Note 2) BT169H VDRM,VRRM 800 V Peak Gate Voltage VGM 5 V Peak Reverse Gate Voltage VRGM 5 V Peak Gate Current IGM 1 A Average On-State Current (Half Sine Wave, TLEAD 83 ≦ °C) IT(AV) 0.5 A RMS On-State Current (All Conduction Angles) IT(RMS) 0.8 A t=10ms 8 A Non-Repetitive Peak On-State Current (Half Sine Wave, TJ=25°C Prior to Surge) t=8.3ms ITSM 9 A I 2t For Fusing (t=10ms) I 2t 0.32 A 2S Repetitive Rate of Rise of On-State Current After Triggering (ITM=2A,IG=10mA, dIG/dt=100mA/μs) dIT/dt 50 A/ μs Peak Gate Power PGM 2 W Average Gate Power (Over any 20 ms period) PG(AV) 0.1 W Junction Temperature TJ +125 °C Storage Temperature TSTG -40 ~ +150 °C Note:1. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Thermal Resistance Junction to Ambient (typ.) θJA 150 °C /W Note: pcb mounted, lead length=4mm ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TSET CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS Gate Trigger Current IGT VD=12V, IT=10 mA, gate open circuit 25 55 μA Latching Current IL VD=12V, IGT=0.5mA, RGK=1kΩ 2 6 mA Holding Current IH VD=12V,IGT=0.5mA, RGK=1kΩ 2 5 mA On-State Voltage VT IT=1A 1.2 1.35 V Gate Trigger Voltage VGT VD=12V, IT=10mA, gate open circuit VD=VDRM(MAX), IT=10mA, TJ=125°C, gate open circuit 0.2 0.5 0.3 0.8 V Off-State Leakage Current ID,IR VD=VDRM(MAX), VR=VRRM(MA\X), TJ=125°C, RGK=1kΩ 0.05 0.1 mA |
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