IXFT44N50P datasheet(1/5 Pages) IXYS

Part #	IXFT44N50P

Description	PolarHV HiPerFET Power MOSFET

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

° C to 175° C

500

V

DGR

T

J

= 25

° C to 175° C; R

GS = 1 MΩ

500

V

GSM

Transient

±40

V

GSM

Continuous

±30

V

I

D25

T

C = 25° C44

A

I

DM

T

C = 25° C, pulse width limited by TJM

110

A

I

AR

T

C = 25° C44

A

E

AR

T

C = 25° C55

mJ

E

AS

T

C = 25° C

1.7

J

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS,

10

V/ns

T

J

≤150° C, R

G = 10 Ω

P

D

T

C = 25° C

650

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic case for 10 s

260

°C

M

d

Mounting torque (TO-247)

1.13/10 Nm/lb.in.

Weight

TO-247

6

g

TO-268

5

g

TO-264

10

g

G = Gate

D = Drain

S = Source

TAB = Drain

DS99366E(03/06)

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 µA

500

V

GS(th)

V

DS = VGS, ID = 4 mA

3.0

5.0

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±10

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 125° C

500

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

140 m

Ω

Pulse test, t

≤300 µs, duty cycle d ≤ 2 %

PolarHVTM HiPerFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

l International standard packages

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

IXFH 44N50P

IXFK 44N50P

IXFT 44N50P

V

DSS

= 500

V

I

D25

=

44

A

R

DS(on) ≤

≤≤≤≤ 140 mΩ

Ω

t

rr

≤≤≤≤≤ 200 ns

TO-247 AD (IXFH)

(TAB)

TO-268 (IXFT)

G

S

(TAB)

S

G

D

(TAB)

TO-264 (IXFK)

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