IXFX32N80P datasheet(1/4 Pages) IXYS

Part #	IXFX32N80P

Description	PolarHV HiPerFET Power MOSFET

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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DS99425E(01/06)

PolarHVTM HiPerFET

Power MOSFET

IXFK 32N80P

V

DSS

= 800

V

IXFX 32N80P

I

D25

=

32

A

R

DS(on)

≤≤≤≤≤ 270 mΩ

Ω

t

rr

≤≤≤≤≤ 250 ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

l International standard packages

l Fast recovery diode

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 µA

800

V

GS(th)

V

DS = VGS, ID = 8 mA

3.0

5.0

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±200

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 125° C

1000

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

270

m

Ω

Pulse test, t

≤300 µs, duty cycle d ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25° C to 150° C

800

V

DGR

T

J = 25° C to 150° C; RGS = 1 MΩ

800

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25° C32

A

I

DM

T

C = 25° C, pulse width limited by TJM

70

A

I

AR

T

C = 25° C16

A

E

AR

T

C = 25° C50

mJ

E

AS

T

C = 25° C

2.0

J

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS,

10

V/ns

T

J ≤150° C, RG = 4 Ω

P

D

T

C = 25° C

830

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

° C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

° C

M

d

Mounting torque (TO-264)

1.13/10 Nm/lb.in.

Weight

TO-264

10

g

PLUS247

6

g

S

G

D

(TAB)

TO-264 (IXFK)

PLUS247 (IXFX)

G = Gate

D

= Drain

S = Source

Tab = Drain

(TAB)

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