30.0 kHz-20.0 GHz GaAs MMIC

Distributed Amplifier

Page 1 of 8

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

CMM3020-BD

Ultra Wide Band Driver Amplifier

Low Gain Ripple

Positive Gain Slope

9.0 dB Small Signal Gain

+23.0 dBm P1dB Compression Point

+35.0 dBm Third Order Intercept

100% Visual Inspection to MIL-STD-883

Method 2010

Features

Chip Device Layout

Absolute Maximum Ratings

Supply Voltage (Vd)

Supply Current (Id1)

Gate Voltage (Vg)

Input Power (Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

+12.0 VDC

350 mA

-5V

+23.0 dBm

-65 to +165 ºC

-55 to +85 ºC

+175 ºC

(1) Channel temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

Parameter

Frequency Range (f)

Gain Flatness ( S21)

Reverse Isolation (S12)

Drain Bias Voltage (Vd)

Gate Bias Voltage (Vg)

Supply Current (Id) (Vd=8.0V,Vg=-0.5V Typical)

Units

GHz

dB

dB

dB

dB

dB

dBm

dBm

dBm

VDC

VDC

mA

Min.

0.00003

8.0

7.0

7.0

-

-

-

-

-

-

-1.5

-

Typ.

-

12.0

12.0

9.0

+/-1.0

35.0

+23.0

+35.0

+26.0

+8.0

-0.5

250

Max.

20.0

-

-

-

-

-

-

-

-

+9.0

0.0

275

Mimix Broadband’s distributed 30 kHz-20.0 GHz GaAs MMIC

distributed amplifier has a small signal gain of 9.0 dB with a

+23.0 dBm P1dB output compression point.This MMIC uses

Mimix Broadband’s GaAs PHEMT device model technology,

and is based upon electron beam lithography to ensure high

repeatability and uniformity.The chip has surface

passivation to protect and provide a rugged part with

backside via holes and gold metallization to allow either a

conductive epoxy or eutectic solder die attach process.This

device is well suited for Test Instrumentation, Military, Space,

Microwave Point-to-Point Radio, SATCOM and VSAT

applications.

General Description

May 2010 - Rev 08-May-10

100% on-wafer DC testing and 100% RF wafer qualification.Wafer qualification includes sample testing from each quadrant

with an 80% pass rate required.

(2) Optional high power bias Vd=9.0V will typically yield 2-3 dB increase in P1dB, Psat and OIP3.

(3) Unless otherwise indicated, Min./Max. over 2.0-20.0 GHz and biased at Vd=8.0V.