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CMM3020-BD Datasheet(PDF) 1 Page - Mimix Broadband |
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CMM3020-BD Datasheet(HTML) 1 Page - Mimix Broadband |
1 / 8 page 30.0 kHz-20.0 GHz GaAs MMIC Distributed Amplifier Page 1 of 8 Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. CMM3020-BD Ultra Wide Band Driver Amplifier Low Gain Ripple Positive Gain Slope 9.0 dB Small Signal Gain +23.0 dBm P1dB Compression Point +35.0 dBm Third Order Intercept 100% Visual Inspection to MIL-STD-883 Method 2010 Features Chip Device Layout Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1) Gate Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)1 +12.0 VDC 350 mA -5V +23.0 dBm -65 to +165 ºC -55 to +85 ºC +175 ºC (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (AmbientTemperature T = 25 oC) Parameter Frequency Range (f) Input Return Loss (S11)3 Output Return Loss (S22)3 Small Signal Gain (S21)3 Gain Flatness ( S21) Reverse Isolation (S12) Output Power for 1dB Compression (P1dB)2 Output Third Order Intermods (OIP3)2 Saturated Output Power (Psat)2 Drain Bias Voltage (Vd) Gate Bias Voltage (Vg) Supply Current (Id) (Vd=8.0V,Vg=-0.5V Typical) Units GHz dB dB dB dB dB dBm dBm dBm VDC VDC mA Min. 0.00003 8.0 7.0 7.0 - - - - - - -1.5 - Typ. - 12.0 12.0 9.0 +/-1.0 35.0 +23.0 +35.0 +26.0 +8.0 -0.5 250 Max. 20.0 - - - - - - - - +9.0 0.0 275 Mimix Broadband’s distributed 30 kHz-20.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 9.0 dB with a +23.0 dBm P1dB output compression point.This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.This device is well suited for Test Instrumentation, Military, Space, Microwave Point-to-Point Radio, SATCOM and VSAT applications. General Description May 2010 - Rev 08-May-10 100% on-wafer DC testing and 100% RF wafer qualification.Wafer qualification includes sample testing from each quadrant with an 80% pass rate required. (2) Optional high power bias Vd=9.0V will typically yield 2-3 dB increase in P1dB, Psat and OIP3. (3) Unless otherwise indicated, Min./Max. over 2.0-20.0 GHz and biased at Vd=8.0V. |
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