© 2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FAN5026 • Rev. 1.0.8

7

Typical Application

Figure 5. DDR Regulator Application

Table 1. DDR Regulator BOM

Description

Qty.

Ref.

Vendor

Part Number

Capacitor 68 f, Tantalum, 25V, ESR 150m

Ω

1

C1

AVX

TPSV686*025#0150

Capacitor 10nf, Ceramic

2

C2, C3

Any

Capacitor 68 f, Tantalum, 6V, ESR 1.8

Ω

1

C4

AVX

TAJB686*006

Capacitor 150nF, Ceramic

2

C5, C7

Any

Capacitor 180 f, Specialty Polymer 4V, ESR 15m

Ω

2

C6A, C6B

(1)

Panasonic

EEFUE0G181R

Capacitor 1000 f, Specialty Polymer 4V, ESR 10m

Ω

1

C8

Kemet

T510E108(1)004AS4115

Capacitor 0.1 F, Ceramic

2

C9

Any

1.82K

Ω, 1% Resistor

3

R1, R2, R3

Any

56.2K

Ω, 1% Resistor

1

R3

Any

10K

Ω, 5% Resistor

2

R4

Any

3.24K

Ω, 1% Resistor

1

R5

Any

1.5K

Ω, 1% Resistor

2

R7, R8

Any

Schottky Diode 30V

2

D1, D2

Fairchild Semiconductor

BAT54

Inductor 6.4 H, 6A, 8.64m

Ω

1

L1

Panasonic

ETQ-P6F6R4HFA

Inductor 0.8 H, 6A, 2.24m

Ω

1

L2

Panasonic

ETQ-P6F0R8LFA

Dual MOSFET with Schottky

2

Q1, Q2

Fairchild Semiconductor

FDS6986AS

(2)

DDR Controller

1

U1

Fairchild Semiconductor

FAN5026

Notes:

1.

C6 = 2 X 180 F in parallel.

2.

above 6A is required, use single SO-8 packages. For more information, refer to the Power MOSFET Selection

Section and use AN-6002 for design calculations.