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XR1011-BD Datasheet(PDF) 1 Page - Mimix Broadband |
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XR1011-BD Datasheet(HTML) 1 Page - Mimix Broadband |
1 / 5 page 4.5-10.5 GHz GaAs MMIC Receiver Integrated LNA, Mixer and LO Buffer Amp 1.6 dB Noise Figure 14.0 dB Conversion Gain BCB Coated Die 100% RF, DC and NF Testing 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010 Features Absolute Maximum Ratings1 Supply Voltage (Vdd) Supply Current (Idd) Gate Voltage (Vgg) Max Power Dissipation (Pdiss) RF Input Power (Pin) LO Input Power (Pin) Operating Temperature (Ta) Storage Temperature (Tstg) Channel Temperature (Tch) +4.3 VDC 180 mA -3 V 750 mW +14 dBm +15 dBm -55 to +85 ºC -65 to +165 ºC 175 °C Page 1 of 5 (1) Operation of this device above any one of these parameters may cause permanent damage (2) Channel temperature directly affects a device’s MTTF. Channel temperature should be kept as low as possible to maximize lifetime Electrical Characteristics (AmbientTemperatureT = 25 oC) Parameter Frequency Range (RF/LO) Frequency Range (IF) Conversion Gain (CG) Noise Figure (NF) Input Third Order Intercept (IIP3) Image Rejection LO Input Drive LO/RF Isolation RF Input Return Loss LO Input Return Loss IF Input Return Loss Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3)3 Gate Bias Voltage (Vg4)4 Supply Current (Id1) Supply Current (Id2) Supply Current (Id3) Supply Current (Ig4) Units GHz GHz dB dB dBm dBc dBm dB dB dB dB VDC VDC VDC mA mA mA mA Min. 4.5 DC 12.05 13.05 -1.2 Typ. - - 14.0 1.6 2.0 20.0 5.0 50.0 10.0 10.0 10.0 4.0 -0.3 -2.0 25.0 45.0 60.0 2.0 Max. 10.5 3.5 2.05 4.0 0.2 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. R1011-BD Mimix Broadband’s 4.5-10.5 GHz receiver has a noise figure of 1.6 dB and 14.0 dB conversion gain across the band. The device integrates an LNA, image reject mixer and LO buffer amplifier within a single, compact MMIC. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This device uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. This device is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications. General Description September 2009 - Rev 11-Sep-09 (3) Vg1,2 and 3 are adjusted to achieve constant drain current regulation. (4) Vg4 provides mixer bias and is fixed at -2.0V. (5) 100% RF tested at 6.5-8.5 GHz. |
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