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IXFP110N15T2 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFP110N15T2 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 6 page  © 2008 IXYS CORPORATION, All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 175°C 150 V V DGR T J = 25 °C to 175°C, R GS = 1MΩ 150 V V GSS Continuous ± 20 V V GSM Transient ± 30 V I D25 T C = 25°C 110 A I DM T C = 25°C, pulse width limited by TJM 300 A I A T C = 25°C50 A E AS T C = 25°C 800 mJ dV/dt I S ≤ I DM,, VDD ≤ VDSS,TJ ≤ 175°C 15 V/ns P D T C = 25°C 480 W T J -55 ... +175 °C T JM 175 °C T stg -55 ... +175 °C T L 1.6mm (0.062in.) from case for 10s 300 °C T sold Plastic body for 10 seconds 260 °C M d Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. Weight TO-263 2.5 g TO-220 3.0 g Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 250μA 150 V V GS(th) V DS = VGS, ID = 250μA 2.5 4.5 V I GSS V GS = ± 20V, VDS = 0V ±200 nA I DSS V DS = VDSS 5 μA V GS = 0V T J = 150°C 150 μA R DS(on) V GS = 10V, ID = 0.5 • ID25, Notes 1, 2 11 13 m Ω TrenchT2TM HiperFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA110N15T2 IXFP110N15T2 V DSS = 150V I D25 = 110A R DS(on) ≤ ≤≤≤≤ 13m Ω Ω Ω Ω Ω DS100093(12/08) G = Gate D = Drain S = Source TAB = Drain Features International standard packages 175°C Operating Temperature High current handling capability Fast intrinsic Rectifier Dynamic dV/dt rated Low R DS(on) Advantages Easy to mount Space savings High power density Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies High speed power switching applications Preliminary Technical Information TO-263 G S (TAB) TO-220 G D S (TAB) |
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