IXFG55N50 datasheet(1/2 Pages) IXYS

Part #	IXFG55N50

Description	HiPerFET Power MOSFETs ISOPLUS247

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C48

A

I

DM

T

C

= 25

°C, Pulse width limited by T

JM

220

A

I

AR

T

C

= 25

°C55

A

E

AR

T

C

= 25

°C60

mJ

E

AS

T

C

= 25

°C3

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

400

W

T

J

-40 ... +150

°C

T

JM

150

°C

T

stg

-40 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

Md

Mounting torque

0.4/6 Nm/lb-in

Weight

5g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 1mA

500

V

GS(th)

V

DS = VGS, ID = 8mA

2.5

4.5 V

I

GSS

V

GS

=

±20 V, V

DS = 0

±200 nA

I

DSS

V

DS

= V

DSS

T

J

= 25

°C

25

µA

V

GS = 0 V

T

J

= 125

°C2 mA

R

DS(on)

V

GS = 10 V, ID = IT

90 m

Ω

Note 1

DS99050(05/03)

ISO264TM

HiPerFETTM Power MOSFETs

ISOPLUS247TM

(Electrically Isolated Back Surface)

Single Die MOSFET

Features

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

Low drain to tab capacitance(<50pF)

Low R

DS (on) HDMOS

TM process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Fast intrinsic Rectifier

Applications

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

AC motor control

Advantages

Easy assembly

Space savings

High power density

G = Gate

D = Drain

S = Source

V

DSS

= 500 V

I

D25

=48 A

R

DS(on)

=

90 m

Ω

IXFG 55N50

S

G

D

(TAB)

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