IXFK64N50P datasheet(1/4 Pages) IXYS

Part #	IXFK64N50P

Description	Polar Power MOSFET HiPerFET

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

500

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C64

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

150

A

I

A

T

C = 25°C

64

A

E

AS

T

C = 25°C

2.5

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

20

V/ns

P

D

T

C = 25°C

830

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Force

(PLUS247)

20..120/4.5..27

N/lb.

Mounting Torque

(TO-264)

1.13/10

Nm/lb.in.

Weight

PLUS247

6

g

TO-264

10

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

500

V

GS(th)

V

DS = VGS, ID = 8mA

3.0

5.5

V

I

GSS

V

GS = ±30V, VDS = 0V

±200 nA

I

DSS

V

DS = VDSS, VGS= 0V

25

μA

T

J = 125°C

1 mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

85 m

Ω

PolarTM Power MOSFET

HiPerFETTM

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrisic Diode

IXFK64N50P

IXFX64N50P

V

DSS

= 500V

I

D25

= 64A

R

DS(on) ≤

≤≤≤≤ 85mΩ

Ω

DS99348F(5/09)

t

rr

≤≤≤≤≤ 200ns

Features

• International Standard Packages

• Fast Intrinsic Diode

• Avalanche Rated

• Low R

DS(ON)

and Q

G

• Low Package Inductance

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

• DC-DC Coverters

• Battery Chargers

• Switched-Mode and Resonant-Mode

Power Supplies

• DC Choppers

• AC and DC Motor Drives

• Uninterrupted Power Supplies

• High Speed Power Switching

Applications

G = Gate

D

= Drain

S = Source

TAB = Drain

(TAB)

G

D

S

TO-264 (IXFK)

PLUS247 (IXFX)

(TAB)

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