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A7001AGHN3 Datasheet(PDF) 10 Page - NXP Semiconductors |
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A7001AGHN3 Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 16 page A7001AG_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Preliminary short data sheet COMPANY PUBLIC Rev. 1.1 — 18 March 2011 202011 10 of 16 NXP Semiconductors A7001AG Secure authentication microcontroller 8. Memory 8.1 Available memory space 8.2 Garbage collection Garbage collection is fully implemented (see Ref. 1): Deleted objects, applets, and packages are fully reclaimed (incl. compactification) and the space can be used for other purposes after deletion. 9. Limiting values [1] MIL Standard 883-D method 3015; human body model; C = 100 pF, R = 1.5 k Ω; T amb = −25 °C to +85 °C. [2] Depending on appropriate thermal resistance of the package. [3] Depending on delivery type, refer to NXP Semiconductors General Specification for 8” Wafers and to NXP Semiconductors Contact & Dual Interface Chip Card Module Specification. 10. Application information Figure 4 shows a typical application diagram. It shows how the pins of the A7001AG shall be applied in order to operate the IC in an I2C system as I2C slave device. In this system an individual reset control is not supported. The hardware reset will be executed at power-up time (power-on reset). Table 5. A7001AG Memory Map Product type Transient Heap (RAM) Persistent Heap (EEPROM) Free ROM for Applets APDU Buffer A7001AG 3550 bytes 79900 bytes 133648 bytes 1462 bytes Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS (ground = 0 V). Symbol Parameter Conditions Min Max Unit VDD supply voltage −0.5 +6.0 V VI input voltage any signal pad −0.5 VDD + 0.5 V II input current pad IO1, IO2 or IO3 - ±15.0 mA IO output current pad IO1, IO2 or IO3 - ±15.0 mA Ilu latch-up current VI <0V or VI >VDD - ±100 mA VESD electrostatic discharge voltage pads VDD, VSS, CLK, RST_N, IO1, IO2, IO3 [1] - ±4.0 kV pads LA, LB [1] - ±2.0 kV Ptot total power dissipation [2] -1 W Tstg storage temperature [3] -- °C |
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