BFU760F

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 29 April 2011

7 of 12

NXP Semiconductors

BFU760F

NPN wideband silicon germanium RF transistor

Fig 7.

Gain as a function of frequency; typical values

Fig 8.

Gain as a function of frequency; typical values

(1) f = 5.8 GHz

(2) f = 2.4 GHz

(3) f = 1.8 GHz

(1) f = 1.5 GHz

Fig 9.

Minimum noise figure as a function of

collector current; typical values

Fig 10. Minimum noise figure as a function of

frequency; typical values

f (GHz)

010

8

46

2

001aam868

20

10

30

40

G

(dB)

0

MSG

f (GHz)

010

8

46

2

001aam869

20

10

30

40

G

(dB)

0

MSG

001aam870

030

20

10

0.4

0.8

1.2

(dB)

0

(1)

(2)

(4)

(3)

f (GHz)

010

8

46

2

001aam871

0.4

0.6

0.2

0.8

1.0

(dB)

0