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CBTD3306 Datasheet(PDF) 9 Page - NXP Semiconductors

Part # CBTD3306
Description  Dual bus switch with level shifting Multiple package options
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

CBTD3306 Datasheet(HTML) 9 Page - NXP Semiconductors

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CBTD3306
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product Specification
Rev. 5 — 28 April 2011
9 of 17
NXP Semiconductors
CBTD3306
Dual bus switch with level shifting
13. Test information
Test data is given in Table 10.
All input pulses are supplied by generators having the following characteristics: PRR
≤ 10 MHz; Zo =50 Ω.
The outputs are measured one at a time with one transition per measurement.
Definitions for test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.
VEXT = External voltage for measuring switching times.
Fig 13. Test circuit for measuring switching times
VM
VM
tW
tW
10 %
90 %
0 V
VI
VI
negative
pulse
positive
pulse
0 V
VM
VM
90 %
10 %
tf
tr
tr
tf
001aae331
VEXT
VCC
VI
VO
DUT
CL
RT
RL
RL
G
Table 10.
Test data
Supply voltage
Input
Load
VEXT
VI
tr, tf
CL
RL
tPLH, tPHL
tPLZ, tPZL
tPHZ, tPZH
VCC = 5.0 V
± 0.5 V
GND to 3.0 V
≤ 2.5 ns
50 pF
500
Ω
open
7.0 V
open


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