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IXGH32N90B2D1 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXGH32N90B2D1 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 7 page IXYS reserves the right to change limits, test conditions, and dimensions. IXGH 32N90B2D1 IXGT 32N90B2D1 Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. g fs I C = I C110 , VCE = 10 V 18 28 S Pulse test, t < 300 μs, duty cycle < 2 % C ies 1790 pF C oes V CE = 25 V, VGE = 0 V, f = 1 MHz 146 pF C res 49 pF Q g 89 nC Q ge I C = IC110 , VGE = 15 V, VCE = 0.5 VCES 15 nC Q gc 34 nC t d(on) 20 ns t ri 22 ns t d(off) 260 400 ns t fi 150 ns E off 2.2 4.5 mJ t d(on) 20 ns t ri 22 ns E on 3.8 mJ t d(off) 360 ns t fi 330 ns E off 5.75 mJ R thJC 0.42 K/W R thCS (TO-247) 0.25 K/W Inductive load, T J = 25°C I C = IC110 , VGE = 15 V V CE = 720 V, RG = Roff = 5 Ω Inductive load, T J = 125°C I C = IC110 A, VGE = 15 V V CE = 720 V, RG = Roff = 5 Ω TO-247 AD Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC e ∅ P TO-268 Outline Ultrafast Diode Symbol Conditions Maximum Ratings I F110 T C = 110°C 27 A Symbol Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. V F I F = 30 A; 2.75 V T VJ = 125°C 1.9 V I RM I F = 50 A; diF/dt = -100 A/μs; TVJ = 100°C 5.5 11.4 A t rr V R = 100 V; VGE = 0 V 190 ns R thJC 0.9 K/W R thCS 0.25 K/W IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478B2 |
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