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IXGH40N60B2D1 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXGH40N60B2D1 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 6 page IXYS reserves the right to change limits, test conditions, and dimensions. IXGH 40N60B2D1 IXGT 40N60B2D1 IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs I C = 30 A; V CE = 10 V, 20 36 S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % C ies 2560 pF C oes V CE = 25 V, VGE = 0 V, f = 1 MHz 210 pF C res 54 pF Q g 100 nC Q ge I C = 30 A, VGE = 15 V, VCE = 300 V 15 nC Q gc 36 nC t d(on) 18 ns t ri 20 ns t d(off) 130 200 ns t fi 82 150 ns E off 0.4 0.8 mJ t d(on) 18 ns t ri 20 ns E on 0.3 mJ t d(off) 240 ns t fi 150 ns E off 1.10 mJ R thJC 0.42 K/W R thCK (TO-247) 0.25 K/W Inductive load, T J = 25° °°°°C I C = 30 A, VGE = 15 V V CE = 400 V, RG = 3.3 Ω Inductive load, T J = 125° °°°°C I C = 30 A, VGE = 15 V V CE = 400 V, RG = 3.3 Ω TO-247 AD Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC e ∅ P TO-268 Outline Min. Recommended Footprint Reverse Diode (FRED) Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. V F I F = 30 A, V GE = 0 V, Pulse test T J =150°C 1.6 V t ≤ 300 µs, duty cycle d ≤ 2 % 2.5 V I RM I F = 30 A, V GE = 0 V, -diF/dt =100 A/µs, TJ = 100°C4 A t rr V R = 100 V T J = 100°C 100 ns I F = 1 A; -di/dt = 100 A/ µs; V R = 30 V 25 ns R thJC 0.9 K/W |
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