IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 40N60B2D1

IXGT 40N60B2D1

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= 30 A; V

20

36

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

2560

pF

C

oes

V

210

pF

C

res

54

pF

Q

g

100

nC

Q

ge

I

15

nC

Q

gc

36

nC

t

d(on)

18

ns

t

ri

20

ns

t

d(off)

130

200

ns

t

fi

82

150

ns

E

off

0.4

0.8 mJ

t

d(on)

18

ns

t

ri

20

ns

E

on

0.3

mJ

t

d(off)

240

ns

t

fi

150

ns

E

off

1.10

mJ

R

thJC

0.42 K/W

R

thCK

(TO-247)

0.25

K/W

Inductive load, T

°°°°C

I

V

Inductive load, T

°°°°C

I

V

TO-247 AD Outline

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

e

∅ P

TO-268 Outline

Min. Recommended Footprint

Reverse Diode (FRED)

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

V

F

I

F

= 30 A, V

T

1.6

V

t

≤ 300 µs, duty cycle d ≤ 2 %

2.5

V

I

RM

I

F

= 30 A, V

A

t

rr

V

T

100

ns

I

F

= 1 A; -di/dt = 100 A/

µs; V

25

ns

R

thJC

0.9 K/W