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IXGH40N60C2 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXGH40N60C2 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 5 page IXYS reserves the right to change limits, test conditions, and dimensions. IXGH 40N60C2 IXGT 40N60C2 Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) min. typ. max. g fs I C = 30 A; V CE = 10 V, 20 36 S Pulse test, t ≤ 300 μs, duty cycle ≤ 2 % C ies 2500 pF C oes V CE = 25 V, VGE = 0 V, f = 1 MHz 180 pF C res 54 pF Q g 95 nC Q ge I C = 30 A, VGE = 15 V, VCE = 300 V 14 nC Q gc 36 nC t d(on) 18 n s t ri 20 n s t d(off) 90 140 n s t fi 32 n s E off 0.20 0.37 mJ t d(on) 18 n s t ri 20 n s E on 0.3 mJ t d(off) 130 n s t fi 80 240 n s E off 0.50 mJ R thJC 0.42 K/W R thCK (TO-247) 0.25 K/W Inductive load, T J = 25° °°°°C I C = 30 A, VGE = 15 V V CE = 400 V, RG = Roff = 3 Ω Inductive load, T J = 125° °°°°C I C = 30 A, VGE = 15 V V CE = 400 V, RG = Roff = 3 Ω TO-247 AD Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC e ∅ P TO-268 Outline Min. Recommended Footprint (Dimensions in inches and mm) IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478B2 |
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