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IXGH72N60B3 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXGH72N60B3 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 6 page © 2009 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. BV CES I C = 250 μA, V GE = 0V 600 V V GE(th) I C = 250 μA, V CE = VGE 3.0 5.0 V I CES V CE = VCES, VGE = 0V 75 μA T J = 125°C 750 μA I GES V CE = 0V, VGE = ±20V ±100 nA V CE(sat) I C = 60A, V GE = 15V, Note 1 1.51 1.80 V T J = 125°C 1.48 V Symbol Test Conditions Maximum Ratings V CES T J = 25 °C to 150°C 600 V V CGR T J = 25 °C to 150°C, R GE = 1MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25 °C (Limited by Leads) 75 A I C110 T C = 110 °C72 A I CM T C = 25 °C, 1ms 400 A I A T C = 25 °C20 A E AS T C = 25 °C 200 mJ SSOA V GE = 15V, TVJ = 125°C, RG = 3Ω I CM = 240 A (RBSOA) Clamped Inductive Load @ V CE ≤ 600 V P C T C = 25 °C 540 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C M d Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. T L 1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10 seconds 260 °C Weight TO-247 6 g TO-268 5 g DS99847A(02/09) V CES = 600V I C110 = 72A V CE(sat) ≤≤≤≤≤£ 1.80V t fi(typ) = 90ns GenX3TM B3-Class IGBTs Medium Speed low Vsat PT IGBTs 5-40 kHz Switching IXGH72N60B3 IXGT72N60B3 TO-247 AD (IXGH) G C E G = Gate C = Collector E = Emitter TAB = Collector (TAB) TO-268 (IXGT) G E (TAB) Features Optimized for Low Conduction and Switching Losses Square RBSOA Avalanche Rated International Standard Packages Advantages High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts |
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