IXGH72N60B3 datasheet(1/6 Pages) IXYS

Part #	IXGH72N60B3

Description	GenX3 B3-Class IGBTs

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

CES

I

C

= 250

μA, V

GE = 0V

600

V

GE(th)

I

C

= 250

μA, V

CE = VGE

3.0

5.0

V

I

CES

V

CE = VCES, VGE = 0V

75

μA

T

J = 125°C

750

μA

I

GES

V

CE = 0V, VGE = ±20V

±100

nA

V

CE(sat)

I

C

= 60A, V

GE = 15V, Note 1

1.51

1.80

V

T

J = 125°C

1.48

V

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25

°C to 150°C

600

V

CGR

T

J

= 25

°C to 150°C, R

GE = 1MΩ

600

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C

= 25

°C (Limited by Leads)

75

A

I

C110

T

C

= 110

°C72

A

I

CM

T

C

= 25

°C, 1ms

400

A

I

A

T

C

= 25

°C20

A

E

AS

T

C

= 25

°C

200

mJ

SSOA

V

GE = 15V, TVJ = 125°C, RG = 3Ω

I

CM = 240

A

(RBSOA)

Clamped Inductive Load

@ V

CE ≤ 600

V

P

C

T

C

= 25

°C

540

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10 seconds

260

°C

Weight

TO-247

6

g

TO-268

5

g

DS99847A(02/09)

V

CES

= 600V

I

C110

= 72A

V

CE(sat)

≤≤≤≤≤£ 1.80V

t

fi(typ)

= 90ns

GenX3TM B3-Class

IGBTs

Medium Speed low Vsat PT

IGBTs 5-40 kHz Switching

IXGH72N60B3

IXGT72N60B3

TO-247 AD (IXGH)

G

C

E

G = Gate

C

= Collector

E = Emitter

TAB = Collector

(TAB)

TO-268 (IXGT)

G

E

(TAB)

Features

Optimized for Low Conduction and

Switching Losses

Square RBSOA

Avalanche Rated

International Standard Packages

Advantages

High Power Density

Low Gate Drive Requirement

Applications

Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

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