Electronic Components Datasheet Search |
|
IXGK50N120C3H1 Datasheet(PDF) 2 Page - IXYS Corporation |
|
IXGK50N120C3H1 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 6 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXGK50N120C3H1 IXGX50N120C3H1 Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. g fs I C = 40A, VCE = 10V, Note 2 24 40 S C ies 4250 pF C oes V CE = 25V, VGE = 0V, f = 1MHz 455 pF C res 120 pF Q g 196 nC Q ge I C = 50A, VGE = 15V, VCE = 0.5 • VCES 24 nC Q gc 84 nC t d(on) 31 ns t ri 36 ns E on 2.0 mJ t d(off) 123 ns t fi 64 ns E off 0.63 1.2 mJ t d(on) 23 ns t ri 37 ns E on 3.0 mJ t d(off) 170 ns t fi 315 ns E off 2.1 mJ R thJC 0.27 °C/W R thCK 0.15 °C/W Inductive load, T J = 125°C I C = 40A, VGE = 15V V CE = 0.5 • VCES, RG = 2Ω Note 3 Inductive load, T J = 25°C I C = 40A, VGE = 15V V CE = 0.5 • VCES, RG = 2Ω Note 3 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. V F I F = 50A, VGE = 0V, Note 1 2.1 2.4 V T J = 125°C 2.3 V I RM 50 A t rr 75 ns R thJC 0.30 °C/W I F = 50A, VGE = 0V, -di F/dt = 2500A/μs, VR = 800V Notes: 1. Part must be heatsunk for high-temp I CES measurement. 2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 3. Switching times & energy loses may increase for higher V CE(Clamp), TJ or RG. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) PLUS247TM (IXGX) Outline TO-264 (IXGK) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 1 2.29 2.54 .090 .100 A 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 |
Similar Part No. - IXGK50N120C3H1 |
|
Similar Description - IXGK50N120C3H1 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |