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IXGK50N120C3H1 Datasheet(PDF) 2 Page - IXYS Corporation

Part # IXGK50N120C3H1
Description  GenX3 1200V IGBTs w/ Diode
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGK50N120C3H1 Datasheet(HTML) 2 Page - IXYS Corporation

  IXGK50N120C3H1 Datasheet HTML 1Page - IXYS Corporation IXGK50N120C3H1 Datasheet HTML 2Page - IXYS Corporation IXGK50N120C3H1 Datasheet HTML 3Page - IXYS Corporation IXGK50N120C3H1 Datasheet HTML 4Page - IXYS Corporation IXGK50N120C3H1 Datasheet HTML 5Page - IXYS Corporation IXGK50N120C3H1 Datasheet HTML 6Page - IXYS Corporation  
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGK50N120C3H1
IXGX50N120C3H1
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
I
C = 40A, VCE = 10V, Note 2
24
40
S
C
ies
4250
pF
C
oes
V
CE = 25V, VGE = 0V, f = 1MHz
455
pF
C
res
120
pF
Q
g
196
nC
Q
ge
I
C = 50A, VGE = 15V, VCE = 0.5 • VCES
24
nC
Q
gc
84
nC
t
d(on)
31
ns
t
ri
36
ns
E
on
2.0
mJ
t
d(off)
123
ns
t
fi
64
ns
E
off
0.63
1.2
mJ
t
d(on)
23
ns
t
ri
37
ns
E
on
3.0
mJ
t
d(off)
170
ns
t
fi
315
ns
E
off
2.1
mJ
R
thJC
0.27 °C/W
R
thCK
0.15
°C/W
Inductive load, T
J = 125°C
I
C = 40A, VGE = 15V
V
CE = 0.5 • VCES, RG = 2Ω
Note 3
Inductive load, T
J = 25°C
I
C = 40A, VGE = 15V
V
CE = 0.5 • VCES, RG = 2Ω
Note 3
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
V
F
I
F = 50A, VGE = 0V, Note 1
2.1
2.4
V
T
J = 125°C
2.3
V
I
RM
50
A
t
rr
75
ns
R
thJC
0.30 °C/W
I
F = 50A, VGE = 0V,
-di
F/dt = 2500A/μs, VR = 800V
Notes:
1. Part must be heatsunk for high-temp I
CES measurement.
2. Pulse test, t
≤ 300μs, duty cycle, d ≤ 2%.
3. Switching times & energy loses may increase for higher V
CE(Clamp), TJ or RG.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
PLUS247TM (IXGX) Outline
TO-264 (IXGK) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190
.205
A
1
2.29
2.54
.090
.100
A
2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b
1
1.91
2.13
.075
.084
b
2
2.92
3.12
.115
.123
C
0.61
0.80
.024
.031
D
20.80 21.34
.819
.840
E
15.75 16.13
.620
.635
e
5.45 BSC
.215 BSC
L
19.81 20.32
.780
.800
L1
3.81
4.32
.150
.170
Q
5.59
6.20
.220 0.244
R
4.32
4.83
.170
.190


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