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IXGK64N60B3D1 Datasheet(PDF) 3 Page - IXYS Corporation

Part # IXGK64N60B3D1
Description  GenX3 600V IGBT with Diode
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGK64N60B3D1 Datasheet(HTML) 3 Page - IXYS Corporation

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© 2008 IXYS CORPORATION, All rights reserved
IXGK64N60B3D1
IXGX64N60B3D1
Fig. 1. Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
80
90
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VCE - Volts
VGE = 15V
11V
9V
5V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
50
100
150
200
250
300
01
2
3456
VCE - Volts
VGE = 15V
13V
11V
7V
9V
Fig. 3. Output Characteristics
@ 125ºC
0
10
20
30
40
50
60
70
80
90
100
0.00.2
0.40.6
0.81.0
1.21.4
1.61.8
2.02.2
VCE - Volts
VGE = 15V
11V
7V
5V
9V
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VGE = 15V
I C = 100A
I C = 50A
I C = 25A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
5
6
7
8
9
10
11
12
13
14
15
VGE - Volts
I C = 100A
50A
25A
TJ = 25ºC
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
VGE - Volts
TJ = 125ºC
25ºC
- 40ºC


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