IXGX82N120B3 datasheet(1/6 Pages) IXYS

Part #	IXGX82N120B3

Description	GenX3 1200V IGBTs

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Manufacturer	IXYS [IXYS Corporation]

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Symbol

Test Conditions

Maximum Ratings

V

CES

T

J = 25°C to 150°C

1200

V

CGR

T

J = 25°C to 150°C, RGE = 1MΩ

1200

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C ( Chip Capability )

230

A

I

C110

T

C = 110°C

82

A

I

LRMS

T

C = 25°C ( Lead RMS Limit )

120

A

I

CM

T

C = 25°C, 1ms

500

A

I

A

T

C = 25°C

41

A

E

AS

T

C = 25°C

750

mJ

SSOA

V

GE = 15V, TVJ = 125°C, RG = 2Ω

I

CM = 164

A

(RBSOA)

Clamped Inductive Load

V

CE < VCES

P

C

T

C = 25°C

1250

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062 in.) from Case for 10

260

°C

M

d

Mounting Torque ( IXGK )

1.13/10

Nm/lb.in.

F

C

Mounting Force ( IXGX )

20..120/4.5..14.6

N/lb.

Weight

TO-264

10

g

PLUS247

6

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

CES

I

C

= 250μA, V

CE = 0V

1200

V

GE(th)

I

C

= 1mA, V

CE = VGE

3.0

5.0

V

I

CES

V

CE = VCES, VGE = 0V

50 μA

T

J = 125°C, Note 1

5 mA

I

GES

V

CE = 0V, VGE = ± 20V

±100 nA

V

CE(sat)

I

C

= I

C110, VGE = 15V, Note 2

2.70

3.20

V

T

J = 125°C

2.64

V

DS100155(05/09)

GenX3TM 1200V

IGBTs

IXGK82N120B3

IXGX82N120B3

V

CES

= 1200V

I

C110

= 82A

V

CE(sat) ≤

≤≤≤≤ 3.20V

High-Speed Low-Vsat PT IGBTs

for 3 - 20 kHz Switching

G = Gate

E

= Emitter

C = Collector

TAB = Collector

(TAB)

TO-264 (IXGK)

E

G

C

E

PLUS247TM (IXGX)

G

C

(TAB)

E

Advance Technical Information

Features

Optimized for Low Conduction and

Switching Losses

Square RBSOA

High Avalanche Capability

International Standard Packages

Advantages

High Power Density

Low Gate Drive Requirement

Applications

Power Inverters

UPS

SMPS

PFC Circuits

Welding Machines

Lamp Ballasts

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IXGX82N120B3 Datasheet(PDF) 1 Page - IXYS Corporation

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