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SFF25P20MTXV Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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SFF25P20MTXV Datasheet(HTML) 2 Page - Solid States Devices, Inc |
2 / 3 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0009B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF25P20 series Electrical Characteristics (@25oC, unless otherwise specified) Symbol Min Typ Max Units Drain to Source Breakdown Voltage VGS = 0V, ID = 250μA BVDSS 200 –– –– V Drain to Source On State Resistance VGS = 10V, ID = 12A, Tj= 25 oC VGS = 10V, ID = 25A, Tj= 25 oC RDS(on) –– –– 125 150 150 –– mΩ Gate Threshold Voltage VDS = VGS, ID = 250μA VGS(th) 3.0 –– 5.0 V Gate to Source Leakage VGS = ±20V IGSS –– –– ±100 nA Zero Gate Voltage Drain Current VDS = 160V, VGS = 0V, Tj = 25 oC VDS = 160V, VGS = 0V, Tj = 125 oC IDSS –– –– –– –– 25 1 μA mA Forward Transconductance VDS = 10V, ID = 24A, Tj = 25 oC gfs 5 12 –– Mho Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V VDS = 100V ID = 12A Qg Qgs Qgd –– –– –– 150 35 70 –– –– nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time VGS = 10V VDS = 100V ID = 12A RG = 4.7Ω td(on) tr td(off) tf –– –– –– –– 35 30 70 30 –– –– –– –– nsec Diode Forward Voltage IF = 25A, VGS = 0V VSD –– 2.0 3.0 V Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 24A, di/dt = 100A/usec trr –– 250 –– nsec Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1 MHz Ciss Coss Crss –– –– –– 4200 850 350 –– –– –– pF NOTES: Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. |
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