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SFF100N20-3TTXV Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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SFF100N20-3TTXV Datasheet(HTML) 2 Page - Solid States Devices, Inc |
2 / 2 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0044A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF100N20/3T Electrical Characteristics5/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage VGS = 0V, ID = 250μA BVDSS 200 220 –– V Drain to Source On State Resistance VGS = 10V, ID = 48A, Tj= 25 oC VGS = 10V, ID = 48A, Tj=125 oC VGS = 10V, ID = 48A, Tj= 175 oC RDS(on) –– –– –– 25 50 65 30 65 –– mΩ Gate Threshold Voltage VDS = VGS, ID = 4.0mA, Tj= 25 oC VDS = VGS, ID = 4.0mA, Tj= 125 oC VDS = VGS, ID = 4.0mA, Tj= -55 oC VGS(th) 2.5 1.5 –– 4.5 3.6 5 5.0 –– 6 V Gate to Source Leakage VGS = ±20V, Tj= 25 oC VGS = ±20V, Tj= 125 oC IGSS –– –– 10 30 ±100 –– nA Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V, Tj = 25 oC VDS = 200V, VGS = 0V, Tj = 125 oC VDS = 200V, VGS = 0V, Tj = 150 oC IDSS –– –– –– 0.01 2.5 25 25 150 –– μA μA μA Forward Transconductance VDS = 10V, ID = 48A, Tj = 25 oC gfs 25 50 –– Mho Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V VDS = 100V ID = 48A Qg Qgs Qgd –– –– –– 150 45 75 250 65 120 nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time VGS = 10V VDS = 100V ID = 48A RG = 4.0Ω, pw= 3us td(on) tr td(off) tf –– –– –– –– 50 50 110 50 75 75 135 75 nsec Diode Forward Voltage IF = 48A, VGS = 0V VSD –– 0.90 1.5 V Diode Reverse Recovery Time Reverse Recovery Charge IF = 10A, di/dt = 100A/usec IF = 10A, di/dt = 100A/usec IF = 10A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec trr1 Irm1 Qrr1 trr2 Irm2 Qrr2 –– –– –– –– –– –– 190 11 1 310 17 2.5 250 –– –– –– –– –– nsec A μC nsec A μC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1 MHz Ciss Coss Crss –– –– –– 5300 1050 175 –– –– –– pF Package Outline: TO-3 Pin Out: Pin 1: GATE Pin 2: SOURCE Pin 3: DRAIN Note 1: P/N: SFF80N20/3T: Pin Diameter: 0.063” 0.058” Note 2: This dimension shall be measured at points .050 - .055” below the seating plane. When gage is not used, measurement will be made at seating plane. This outline does not meet the minimum criteria established by JS-10 for registration. |
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