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TLRE16TP Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLRE16TP Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 9 page TL(RE,RME,SE,OE,YE)16TP(F) 2009-11-30 3 Electrical and Optical Characteristics (Ta = 25°C) Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product Name λd λP Δλ IF Min Typ. IF Typ. Max IF Max VR TLRE16TP(F) 630 644 20 20 272 800 20 1.9 2.4 20 50 4 TLRME16TP(F) 626 636 23 20 272 1200 20 1.9 2.4 20 50 4 TLSE16TP(F) 613 623 20 20 476 1500 20 1.9 2.4 20 50 4 TLOE16TP(F) 605 612 20 20 850 2000 20 2.0 2.4 20 50 4 TLYE16TP(F) 587 590 17 20 476 1500 20 2.0 2.4 20 50 4 Unit nm mA mcd mA V mA μA V Precautions Please be careful of the following: • Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 1.6 mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
Similar Part No. - TLRE16TP_09 |
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Similar Description - TLRE16TP_09 |
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