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BF2030 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BF2030 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 11 page 2007-04-20 1 BF2030... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 G2 G1 GND AGC RF Input Drain RF Output + DC VGG RG1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Human Body Model Type Package Pin Configuration Marking BF2030 BF2030R BF2030W SOT143 SOT143R SOT343 1= S 1= D 1= D 2=D 2=S 2=S 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - - - - - - NDs NDs NDs Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 8 V Continuous drain current ID 40 mA Gate 1/ gate 2-source current ±I G1/2SM 10 Gate 1 (external biasing) +VG1SE 6 V Total power dissipation TS ≤ 76 °C, BF2030, BF2030R TS ≤ 94 °C, BF2030W Ptot 200 200 mW Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150 1Pb-containing package may be available upon special request |
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