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BF2040W Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BF2040W Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 11 page 2007-06-01 1 BF2040... Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V • Pb-free (RoHS compliant) package • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040 BF2040R BF2040W SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - - - - - - NFs NFs NFs Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 8 V Continuous drain current ID 40 mA Gate 1/ gate 2-source current ±IG1/2SM 10 Gate 1 (external biasing) +VG1SE 7 V Total power dissipation TS ≤ 76 °C, BF2040, BF2040R TS ≤ 94 °C, BF2040W Ptot 200 200 mW Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150 Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) BF2040, BF2040R BF2040W Rthchs ≤ 370 ≤ 280 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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