BFP740F datasheet(6/10 Pages) INFINEON

Part #	BFP740F

Description	NPN Silicon Germanium RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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6 / 10 page

2007-04-20

BFP740F

6

Third order Intercept Point IP3 = ƒ (IC)

(Output,

ZS = ZL = 50 Ω )

VCE = parameter, f = 900 MHz

0

5

10

15

20

25

30

35

0

3

6

9

12

15

18

21

24

27

30

I

C

[mA]

1.00V

2.00V

3.00V

4.00V

Transition frequency fT = ƒ(IC)

VCE = parameter in V, f = 2 GHz

0

5

10

15

20

25

30

35

0

5

10

15

20

25

30

35

40

45

50

I

C

[mA]

2V to 4V

1.00V

0.75V

0.50V

Power gain Gma, Gms = ƒ (f)

VCE = 3 V, IC = 25 mA

0

1

2

3

4

5

6

5

10

15

20

25

30

35

40

45

50

55

f [GHz]

[GHz]

G

ms

G

ma

|S

21

|

2

Power gain Gma, Gms = ƒ (IC)

VCE = 3 V

f = parameter in GHz

0

5

10

15

20

25

30

35

10

12

14

16

18

20

22

24

26

28

30

32

34

I

C

[mA]

6.00GHz

5.00GHz

4.00GHz

3.00GHz

2.40GHz

1.80GHz

0.90GHz

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