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BFR182W Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # BFR182W
Description  NPN Silicon RF Transistor
Download  7 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFR182W Datasheet(HTML) 1 Page - Infineon Technologies AG

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2010-04-06
1
BFR182W
1
2
3
NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
• fT = 8 GHz, F = 0.9 dB at 900 MHz
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD
(Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFR182W
RGs
1=B
2=E
3=C
SOT323
Maximum Ratings
at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
V
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
35
mA
Base current
IB
4
Total power dissipation1)
TS ≤ 90 °C
Ptot
250
mW
Junction temperature
TJ
150
°C
Ambient temperature
TA
-55 ... 150
Storage temperature
TStg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
≤ 240
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance


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