BSB028N06NN3G datasheet(4/13 Pages) INFINEON

Part #	BSB028N06NN3G

Description	n-Channel Power MOSFET

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Manufacturer	INFINEON [Infineon Technologies AG]

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OptiMOS™ Power-MOSFET

BSB028N06NN3 G

Electrical characteristics

Preliminary Data Sheet

3

1.3, 2011-03-01

4

Electrical characteristics

Electrical characteristics, at

Tj=25 °C, unless otherwise specified.

Table 4

Static characteristics

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Drain-source breakdown voltage

V

(BR)DSS

60

-

V

GS=0 V, ID=1 mA

Gate threshold voltage

V

GS(th)

23

4

V

DS=VGS, ID=102 µA

Zero gate voltage drain current

I

DSS

-0.1

10

µA

V

DS=60V, VGS=0 V,

T

j=25 °C

-

10

100

V

DS=60 V, VGS=0 V,

T

j=125 °C

Gate-source leakage current

I

GSS

-

10

100

nA

V

GS=20 V, VDS=0 V

Drain-source on-state resistance

R

DS(on)

-2.2

2.8

m

Ω

V

GS=10 V, ID=30A

Gate resistance

R

G

-0.5

-

Ω

Transconductance

g

fs

42

83

S

|V

DS|>2|ID|RDS(on)max,

I

D=30 A

Table 5

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Input capacitance

C

iss

-

8800

12000

pF

V

GS=0 V, VDS=30 V,

f=1 MHz

Output capacitance

C

oss

-

2100

2800

Reverse transfer capacitance

C

rss

-64

-

Turn-on delay time

t

d(on)

-21

-

ns

V

DD=30V, VGS=10 V,

I

D=30 A, RG=1.6 Ω

Rise time

t

r

-9

-

Turn-off delay time

t

d(off)

-38

-

Fall time

t

f

-6

-

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