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BSB028N06NN3G Datasheet(PDF) 5 Page - Infineon Technologies AG |
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BSB028N06NN3G Datasheet(HTML) 5 Page - Infineon Technologies AG |
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5 / 13 page  OptiMOS™ Power-MOSFET BSB028N06NN3 G Electrical characteristics Preliminary Data Sheet 4 1.3, 2011-03-01 Table 6 Gate charge characteristics 1) 1) See figure 16 for gate charge parameter definition Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Q gs -41 - nC V DD=30 V, I D=30 A, V GS=0 to 10 V Q gd 8 Gate to drain charge Q sw -23 - Switching charge Q g - 108 143 Gate charge total V plateau -4.6 - V Output charge Q oss 87 116 nC V DD=30 V, VGS=0 V Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode continuous forward current I s 30 A T C=25 °C Diode pulse current I S,pulse 120 Diode forward voltage V SD -0.8 1.2 V V GS=0 V, IF=30 A, T j=25 °C Reverse recovery charge Q rr -87 - nC V R=30V, IF=Is, d i F/dt=100 A/µs Reverse recovery time t rr -60 - ns |
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