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BSO201SPH Datasheet(PDF) 7 Page - Infineon Technologies AG |
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BSO201SPH Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 9 page BSO201SP H 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-14.9 A pulsed parameter: T j(start) parameter: V DD 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=0.25 mA 18 18.5 19 19.5 20 20.5 21 21.5 22 22.5 23 -60 -20 20 60 100 140 180 T j [°C] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 125 °C 0.1 1 10 100 1 10 100 1000 t AV [µs] 4 V 10 V 16 V 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 - Q gate [nC] Rev.1.32 page 7 2009-12-21 |
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