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BSP75N Datasheet(PDF) 7 Page - Infineon Technologies AG |
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BSP75N Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 15 page Data Sheet Rev. 1.4 7 2008-07-10 HITFET BSP 75N EMC-Characteristics The following EMC-Characteristics outline the behavior of typical devices. They are not part of any production test. Table 1Test Conditions Parameter Symbol Value Unit Remark Temperature T A 23 ±5 °C – Supply Voltage V S 13.5 V – Load R L 27 Ω ohmic Operation mode PWM DC – – – – f INx=100Hz, D=0.5 ON / OFF DUT specific V IN(’HIGH’)=5V Fast electrical transients acc. to ISO 7637 1) The test pulses are applied at V S Test 1) Pulse 1 -200V C C 500ms ; 10 Ω 2 +200V C C 500ms ; 10 Ω 3a -200V C C 100ms ; 50 Ω 3b +200V C C 100ms ; 50 Ω 4 -7V C C 0.01 Ω 5 175V E(65V) E(75V) 400ms ; 2 Ω Definition of functional status Class Content C All functions of the device are performed as designed after exposure to disturbance. E One or more function of a device does not perform as designed after exposure and can not be returned to proper operation without repairing or replacing the device. The value after the character shows the limit. Max. Test Level Test Result Pulse Cycle Time and Generator Impedance OUT x stressed ON OFF |
Similar Part No. - BSP75N_08 |
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Similar Description - BSP75N_08 |
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