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BSP75N Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BSP75N Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 15 page HITFET BSP 75N Data Sheet Rev. 1.4 6 2008-07-10 Slew rate on 70 to 50% V BB: -d V DS/ d t on – 5 10 V/ µs R L = 22 Ω, V IN = 0 to 10 V, V BB = 12 V Slew rate off 50 to 70% V BB: d V DS/ d t off – 10 15 V/ µs R L = 22 Ω, V IN = 10 to 0 V, V BB = 12 V Protection Functions 2) Thermal overload trip temperature T jt 150 165 180 °C – Thermal hysteresis ∆T jt – 10 – Κ – Unclamped single pulse inductive energy T j = 25 °C T j = 150 °C E AS 550 200 – – – – mJ I D(ISO) = 0.7 A, V BB = 32 V Inverse Diode Continuous source drain voltage V SD – 1 – V V IN = 0 V, - I D = 2 × 0.7 A 1) See also Figure 9. 2) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous, repetitive operation. Electrical Characteristics (cont’d) T j = 25 °C, unless otherwise specified Parameter Sym- bol Limit Values Unit Test Conditions min. typ. max. |
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