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BSP171P Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSP171P Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page BSP171P Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 365 460 pF Output capacitance C oss - 105 135 Reverse transfer capacitance C rss -40 55 Turn-on delay time t d(on) -6 8 ns Rise time t r -25 33 Turn-off delay time t d(off) - 208 276 Fall time t f - 87 130 Gate Charge Characteristics 2) Gate to source charge Q gs - -1.2 -1.6 nC Gate to drain charge Q gd --5 -7 Gate charge total Q g - -13 -20 Gate plateau voltage V plateau --3- V Output charge Q oss V DD=-15 V, V GS=0 V --5 -7 Reverse Diode Diode continuous forward current I S - - -1.9 A Diode pulse current I S,pulse - - -7.6 Diode forward voltage V SD V GS=0 V, I F=1.9 A, T j=25 °C - -0.84 -1.1 V Reverse recovery time t rr - 80 120 ns Reverse recovery charge Q rr - -125 -190 nC 2) See figure 16 for gate charge parameter definition T A=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-25 V, V GS=-10 V, I D=-1.9 A, R G=6 Ω V DD=-48 V, I D=1.9 A, V GS=0 to -10 V V R=-30 V, I F=|I S|, di F/dt =100 A/µs Rev 2. 4 page 3 200 7-02-08 |
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