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BSP315P Datasheet(PDF) 8 Page - Infineon Technologies AG

Part # BSP315P
Description  SIPMOS Small-Signal-Transistor
Download  9 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSP315P Datasheet(HTML) 8 Page - Infineon Technologies AG

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BSP 315 P
Avalanche Energy
EAS = f (Tj)
parameter:
ID = -1.17 A , VDD = -25 V
RGS = 25 Ω
25
45
65
85
105
125
°C
165
Tj
0
5
10
15
mJ
25
Typ. gate charge
VGS = f (QGate)
parameter:
ID = -1.17 A pulsed
0.0
1.0
2.0
3.0
4.0
5.0
6.0
nC
8.0
QGate
0
-2
-4
-6
-8
-10
-12
V
-16
BSP 315 P
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60
-20
20
60
100
°C
180
Tj
-54
-56
-58
-60
-62
-64
-66
-68
V
-72
BSP 315 P
2007-02-08
Rev.1.4
Page 8


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