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BSP318S Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BSP318S Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 9 page 2008-03-21 Page 6 BSP318S Rev 2.2 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VDS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 A 6.5 BSP318S V GS [V] a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 5.5 i i 6.0 j j 7.0 k k 8.0 l Ptot = 1.80W l 10.0 Typ. transfer characteristics ID= f ( VGS ) VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 5 6 7 8 V 10 VGS 0 1 2 3 4 5 6 7 8 9 10 11 12 A 15 Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 2.6 A, VGS = 4.5 V -60 -20 20 60 100 °C 180 Tj 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 Ω 0.36 BSP318S typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS, ID = 20 µA -60 -20 20 60 100 140 °C 200 Tj 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 V 3.0 min typ max |
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