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BSS159N Datasheet(PDF) 7 Page - Infineon Technologies AG |
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BSS159N Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 9 page BSS159N 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.16 A pulsed parameter: T j parameter: V DD 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 50 70 -60 -20 20 60 100 140 180 T j [°C] 0.2 VDS(max) 0.5 VDS(max) 0.8 VDS(max) -4 -3 -2 -1 0 1 2 3 4 5 6 01 2 Q gate [nC] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 0.001 0.01 0.1 1 0 0.4 0.8 1.2 V SD [V] Rev. 1.32 page 7 2006-12-11 |
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