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BTS3134D Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BTS3134D Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 11 page Datasheet 1 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 3134D Product Summary Drain source voltage VDS 42 V On-state resistance RDS(on) 50 m Nominal load current ID(Nom) 3.5 A Clamping energy EAS 3 J Application All kinds of resistive, inductive and capacitive loads in switching or linear applications µC compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Gate-Driving Unit ESD Overload Protection Over- temperature Protection Short circuit Protection Overvoltage- Protection Current Limitation M Vbb In Source Drain HITFET Pin 1 Pin 2 and 4 (TAB) Pin 3 Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown • Green product (RoHS compliant) · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible P / PG-TO252-3-11 |
Similar Part No. - BTS3134D_06 |
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Similar Description - BTS3134D_06 |
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