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LS5908_TO-71 Datasheet(PDF) 1 Page - Micross Components |
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LS5908_TO-71 Datasheet(HTML) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES LOW DRIFT | VGS1‐2 / T| = 5µV/°C TYP. ULTRA LOW LEAKAGE IG = 150fA TYP. LOW PINCHOFF Vp = 2V TYP. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 40V ‐VDSO Drain to Source Voltage 40V ‐IG(f) Gate Forward Current 10mA ‐IG Gate Reverse Current 10µA Maximum Power Dissipation Device Dissipation @ Free Air – Total 40mW @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | VGS1‐2 / T| max. DRIFT VS. TEMPERATURE 20 µV/°C VDG=10V, ID=30µA TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 10 mV VDG=10V, ID=30µA ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVGSS Breakdown Voltage 40 60 ‐‐ V VDS = 0 ID=1nA BVGGO Gate‐To‐Gate Breakdown 40 ‐‐ ‐‐ V IG= 1nA ID= 0 IS= 0 YfSS TRANSCONDUCTANCE Full Conduction 70 300 500 µmho VDG= 10V VGS= 0V f = 1kHz YfS Typical Operation 50 100 200 µmho VDG= 10V ID= 30µA f = 1kHz |YFS1‐2 / Y FS| Mismatch ‐‐ 1 5 % IDSS DRAIN CURRENT Full Conduction 60 400 1000 µA VDG= 10V VGS= 0V |IDSS1‐2 / IDSS| Mismatch at Full Conduction ‐‐ 2 5 % VGS(off) or Vp GATE VOLTAGE Pinchoff voltage 0.6 2 4.5 V VDS= 10V ID= 1nA VGS(on) Operating Range ‐‐ ‐‐ 4 V VDS=10V ID=30µA ‐IGmax. GATE CURRENT Operating ‐‐ ‐‐ 1 pA VDG= 10V ID= 30µA ‐IGmax. High Temperature ‐‐ ‐‐ 1 nA TA= +125°C ‐IGSSmax. At Full Conduction ‐‐ ‐‐ 2 pA VDS =0V VGS= 20V ‐IGSSmax. High Temperature ‐‐ ‐‐ 5 nA TA= +125°C IGGO Gate‐to‐Gate Leakage ‐‐ 1 ‐‐ pA VGG= 20V YOSS OUTPUT CONDUCTANCE Full Conduction ‐‐ ‐‐ 5 µmho VDG= 10V VGS= 0V YOS Operating ‐‐ 0.1 0.1 VDG= 10V ID=30µA |YOS1‐2| Differential ‐‐ 0.01 0.1 CMR COMMON MODE REJECTION ‐20 log |∆VGS1‐2/∆VDS| ‐‐ 90 ‐‐ dB ∆VDS = 10 to 20V ID=30µA CMR ‐20 log |∆VGS1‐2/∆VDS| ‐‐ 90 ‐‐ ∆VDS = 5 to 10V ID=30µA NF NOISE Figure ‐‐ ‐‐ 1 dB VDS= 10V VGS= 0V RG= 10MΩ f= 100Hz NBW= 6Hz en Voltage ‐‐ 20 70 nV/√Hz VDG=10V ID=30µA f=10Hz NBW=1Hz CISS CAPACITANCE Input ‐‐ ‐‐ 3 pF VDS= 10V VGS= 0V f= 1MHz CRSS Reverse Transfer ‐‐ ‐‐ 1.5 CDD Drain‐to‐Drain ‐‐ ‐‐ 0.1 VDG = 20V ID=30µA LS5908 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired TO-71 (Bottom View) Available Packages: LS5908 in TO-71 LS5908 available as bare die Please contact Micross for full package and die dimensions Micross Components Europe Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution LS5908 Benefits: Tight Tracking Good matching Ultra Low Leakage Low Drift The LS5908 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications where tight tracking is required. The hermetically sealed TO-71 package is well suited for hi-reliability and harsh environment applications. (See Packaging Information). |
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