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LSJ211_SOT-23 Datasheet(PDF) 1 Page - Micross Components |
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LSJ211_SOT-23 Datasheet(HTML) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx FEATURES DIRECT REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐55°C to +150°C Operating Junction Temperature ‐55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation 360mW Derating over temperature 3.27 mW/°C MAXIMUM CURRENT Gate Current (Note 1) 10mA MAXIMUM VOLTAGES Gate to Drain Voltage or Gate to Source Voltage ‐25V LSJ211 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ V VDS = 0V, IG = ‐1µA VGS(off) Gate to Source Cutoff Voltage ‐2.5 ‐‐ ‐4.5 VDS = 15V, ID = 1nA IDSS Drain to Source Saturation Current (Note 2) 7 ‐‐ 20 mA VDS = 15V, VGS = 0V IGSS Gate Reverse Current (Note 3) ‐‐ ‐‐ ‐100 pA VDS = 0V, VGS = ‐15V IG Gate Operating Current (Note 3) ‐‐ ‐10 ‐‐ pA VDS = 10V, ID = 1mA rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 50 Ω IG = 1mA, VDS = 0V LSJ211 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance 6000 ‐‐ 12000 µmho VDS = 15V, VGS = 0V , f = 1kHz gos Output Conductance ‐‐ ‐‐ 200 Ciss Input Capacitance ‐‐ 4 ‐‐ pF VDS = 15V, VGS = 0V , f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 1 ‐‐ en Equivalent Noise Voltage ‐‐ 10 ‐‐ nV/√Hz VDS = 15V, VGS = 0V , f = 1kHz LSJ211 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS td(on) Turn On Time 2 ns VDD = 10V VGS(H) = 0V See Switching Circuit tr Turn On Rise Time 2 td(off) Turn Off Time 6 tf Turn Off Fall Time 15 LSJ211 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J211 The LSJ211 is a n-channel JFET General Purpose amplifier with low noise and low leakage. The SOT-23 package is well suited for cost sensitive applications and mass production. (See Packaging Information). LSJ211 Applications: General Purpose Amplifiers UHV / VHF Amplifiers Mixers Oscillators LSJ211 Benefits: High gain Low Leakage Low Noise Micross Components Europe Available Packages: LSJ211 in SOT-23 LSJ211 in bare die. Please contact Micross for full package and die dimensions Note 1 ‐ Absolute maximum ratings are limiting values above which LSJ211 serviceability may be impaired. Note 2 ‐ Pulse test duration = 2ms Note 3 – Approximately doubles for every 10 °C increase in TA Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution SOT-23 (Top View) |
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