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LSJ211_SOT-23 Datasheet(PDF) 1 Page - Micross Components

Part # LSJ211_SOT-23
Description  N-CHANNEL JFET
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Manufacturer  MICROSS [Micross Components]
Direct Link  http://www.micross.com
Logo MICROSS - Micross Components

LSJ211_SOT-23 Datasheet(HTML) 1 Page - Micross Components

  LSJ211_SOT-23 Datasheet HTML 1Page - Micross Components  
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web:
www.micross.com/distribution.aspx
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX J211 
HIGH GAIN  
gfs = 7000µmho MIN 
HIGH INPUT IMPEDANCE 
IGSS = 100pA max 
LOW INPUT CAPACITANCE 
Ciss = 5pF 
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐55°C to +150°C 
Operating Junction Temperature ‐55°C to +135°C 
Maximum Power Dissipation 
Continuous Power Dissipation  
360mW 
Derating over temperature 
3.27 mW/°C 
MAXIMUM CURRENT
Gate Current (Note 1) 
10mA 
MAXIMUM VOLTAGES 
Gate to Drain Voltage or  Gate to Source Voltage  ‐25V 
  
LSJ211 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
BVGSS 
Gate to Source Breakdown Voltage ‐25 
‐‐ 
‐‐ 
VDS = 0V, IG = ‐1µA 
VGS(off) 
Gate to Source Cutoff Voltage ‐2.5 
‐‐ 
‐4.5 
VDS = 15V,  ID = 1nA 
IDSS 
Drain to Source Saturation Current (Note 2) 
‐‐ 
20 
mA 
VDS = 15V, VGS = 0V 
IGSS 
Gate Reverse Current (Note 3) 
‐‐ 
‐‐ 
‐100 
pA 
VDS = 0V, VGS = ‐15V 
IG 
Gate Operating Current (Note 3) 
‐‐ 
‐10 
‐‐ 
pA 
VDS = 10V,  ID = 1mA 
rDS(on) 
Drain to Source On Resistance 
‐‐ 
‐‐ 
50 Ω 
IG = 1mA,  VDS = 0V 
 
 
    
 
LSJ211 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
gfs 
Forward Transconductance 
6000 
‐‐ 
12000 
µmho 
VDS = 15V,   VGS = 0V , f = 1kHz 
gos 
Output Conductance 
‐‐ 
‐‐ 
200 
Ciss 
Input Capacitance 
‐‐ 
‐‐ 
pF 
VDS = 15V,   VGS = 0V , f = 1MHz  
Crss 
Reverse Transfer Capacitance 
‐‐ 
‐‐ 
en 
Equivalent Noise Voltage 
‐‐ 
10 
‐‐ 
nV/√Hz 
VDS = 15V,   VGS = 0V , f = 1kHz 
 
 
    
 
LSJ211 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC  
UNITS 
CONDITIONS 
td(on) 
Turn On Time 
2  
 
ns 
VDD = 10V 
VGS(H) = 0V 
 
See Switching Circuit 
tr 
Turn On Rise Time 
td(off) 
Turn Off Time 
tf 
Turn Off Fall Time 
15 
  
 
  
 
  
 
  
 
  
 
LSJ211
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J211
The LSJ211 is a n-channel JFET General Purpose
amplifier with low noise and low leakage.
The SOT-23 package is well suited for cost sensitive
applications and mass production.
(See Packaging Information).
LSJ211 Applications:
General Purpose Amplifiers
UHV / VHF Amplifiers
Mixers
Oscillators
LSJ211 Benefits:
High gain
Low Leakage
Low Noise
Micross Components Europe
Available Packages:
LSJ211 in SOT-23
LSJ211 in bare die.
Please contact Micross for full
package and die dimensions
Note 1 ‐ Absolute maximum ratings are limiting values above which LSJ211 serviceability may be impaired.  
Note 2 ‐ Pulse test duration = 2ms 
Note 3 – Approximately doubles for every 10
°C increase in TA 
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
SOT-23 (Top View)


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