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SEMIX151GD066HDS Datasheet(PDF) 1 Page - Semikron International |
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SEMIX151GD066HDS Datasheet(HTML) 1 Page - Semikron International |
1 / 5 page SEMiX151GD066HDs © by SEMIKRON Rev. 0 – 16.04.2010 1 SEMiX® 13 GD Trench IGBT Modules SEMiX151GD066HDs Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 600 V IC Tj = 175 °C Tc =25°C 200 A Tc =80°C 151 A ICnom 150 A ICRM ICRM = 2xICnom 300 A VGES -20 ... 20 V tpsc VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj = 150 °C 6µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =25°C 219 A Tc =80°C 161 A IFnom 150 A IFRM IFRM = 2xIFnom 300 A IFSM tp = 10 ms, sin 180°, Tj =25°C 980 A Tj -40 ... 175 °C Module It(RMS) 600 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =150 A VGE =15V chiplevel Tj =25°C 1.45 1.85 V Tj = 150 °C 1.7 2.1 V VCE0 Tj =25°C 0.9 1 V Tj = 150 °C 0.85 0.9 V rCE VGE =15V Tj =25°C 3.7 5.7 mΩ Tj = 150 °C 5.7 8.0 mΩ VGE(th) VGE=VCE, IC =2.4 mA 5 5.8 6.5 V ICES VGE =0V VCE =600 V Tj =25°C 0.15 0.45 mA Tj = 150 °C mA Cies VCE =25 V VGE =0V f=1MHz 9.2 nF Coes f=1MHz 0.58 nF Cres f=1MHz 0.27 nF QG VGE =- 8 V...+ 15 V 1200 nC RGint Tj =25°C 2.00 Ω td(on) VCC = 300 V IC =150 A RG on =4.5 Ω RG off =4.5 Ω Tj = 150 °C 140 ns tr Tj = 150 °C 40 ns Eon Tj = 150 °C 3.8 mJ td(off) Tj = 150 °C 385 ns tf Tj = 150 °C 40 ns Eoff Tj = 150 °C 6.1 mJ Rth(j-c) per IGBT 0.29 K/W |
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