PMN20EN datasheet(5/15 Pages) NXP

Part #	PMN20EN

Description	30 V, 6.7 A N-channel Trench MOSFET

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Manufacturer	NXP [NXP Semiconductors]

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PMN20EN

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Product data sheet

Rev. 1 — 30 May 2011

5 of 15

NXP Semiconductors

PMN20EN

30 V, 6.7 A N-channel Trench MOSFET

7.

Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =250 µA; VGS =0V; Tj = 25 °C

30

--V

VGSth

gate-source threshold

voltage

ID =250 µA; VDS =VGS; Tj =25°C

1

1.5

2.5

V

IDSS

drain leakage current

VDS =30V; VGS =0V; Tj = 25 °C

--1

µA

VDS =30V; VGS =0V; Tj = 150 °C

--10

µA

IGSS

gate leakage current

VGS =20V; VDS =0V; Tj = 25 °C

-

100

nA

VGS =-20 V; VDS =0V; Tj = 25 °C

-

100

nA

RDSon

drain-source on-state

resistance

VGS =10V; ID =6.7 A; Tj = 25 °C

-

16

20

m

Ω

VGS =10V; ID =6.7 A; Tj = 150 °C

-

2531m

Ω

VGS =4.5 V; ID = 4.5 A; Tj = 25 °C

-

20

25

m

Ω

gfs

forward

transconductance

VDS =5V; ID =3 A; Tj =25°C

-

12

-

S

Dynamic characteristics

QG(tot)

total gate charge

VDS =15V; ID =3A; VGS =10V;

Tj =25°C

-

12.4

18.6

nC

QGS

gate-source charge

-

1.7

-

nC

QGD

gate-drain charge

-

2.1

-

nC

Ciss

input capacitance

VDS =15V; f=1MHz; VGS =0V;

Tj =25°C

-

630

-

pF

Coss

output capacitance

-

155

-

pF

Crss

reverse transfer

capacitance

-70

-pF

td(on)

turn-on delay time

VDS =15V; VGS =10V; RG(ext) =6 Ω;

Tj =25°C; ID =3A

-4

-ns

tr

rise time

-

11

-

ns

td(off)

turn-off delay time

-

200

-

ns

tf

fall time

-

85

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 1.2 A; VGS =0V; Tj = 25 °C

-

0.72

1.2

V

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