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SKM150GM12T4G Datasheet(PDF) 1 Page - Semikron International |
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SKM150GM12T4G Datasheet(HTML) 1 Page - Semikron International |
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1 / 5 page  SKM150GM12T4G © by SEMIKRON Rev. 0 – 22.06.2009 1 SEMITRANS® 3 GM Fast IGBT4 Modules SKM150GM12T4G Features •VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) Typical Applications • Matrix Inverter Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 175 °C Tc =25°C 229 A Tc =80°C 177 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =25°C 187 A Tc =80°C 140 A IFnom 150 A IFRM IFRM = 3xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj =25°C 774 A Tj -40 ... 175 °C Module It(RMS) 500 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =150 A VGE =15V chiplevel Tj =25°C 1.85 2.1 V Tj = 150 °C 2.25 2.45 V VCE0 Tj =25°C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE VGE =15V Tj =25°C 7.0 8.0 mΩ Tj = 150 °C 10.3 11.0 mΩ VGE(th) VGE=VCE, IC =6mA 5 5.8 6.5 V ICES VGE =0V VCE = 1200 V Tj =25°C 0.1 0.3 mA Tj = 150 °C mA Cies VCE =25 V VGE =0V f=1MHz 8.8 nF Coes f=1MHz 0.58 nF Cres f=1MHz 0.47 nF QG VGE =- 8 V...+ 15 V 850 nC RGint Tj =25°C 5.0 Ω td(on) VCC = 600 V IC =150 A VGE =±15 V RG on =1 Ω RG off =1 Ω di/dton = 3400 A/µs di/dtoff = 1750 A/µs Tj = 150 °C 180 ns tr Tj = 150 °C 42 ns Eon Tj = 150 °C 19.2 mJ td(off) Tj = 150 °C 410 ns tf Tj = 150 °C 72 ns Eoff Tj = 150 °C 15.8 mJ Rth(j-c) per IGBT 0.19 K/W |
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