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SKM200GB12E4_0906 Datasheet(PDF) 2 Page - Semikron International

Part # SKM200GB12E4_0906
Description  IGBT4 Modules
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Manufacturer  SEMIKRON [Semikron International]
Direct Link  http://www.semikron.com
Logo SEMIKRON - Semikron International

SKM200GB12E4_0906 Datasheet(HTML) 2 Page - Semikron International

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SKM200GB12E4
2
Rev. 2 – 16.06.2009
© by SEMIKRON
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Inverse diode
VF = VEC
IF =200 A
VGE =0V
chip
Tj =25°C
2.2
2.52
V
Tj = 150 °C
2.15
2.47
V
VF0
Tj =25°C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
rF
Tj =25°C
4.5
5.1
mΩ
Tj = 150 °C
6.3
6.8
mΩ
IRRM
IF =200 A
di/dtoff = 4450 A/µs
VGE =±15 V
VCC = 600 V
Tj = 150 °C
174
A
Qrr
Tj = 150 °C
33
µC
Err
Tj = 150 °C
13
mJ
Rth(j-c)
per diode
0.26
K/W
Module
LCE
15
20
nH
RCC'+EE'
terminal-chip
TC =25°C
0.25
mΩ
TC = 125 °C
0.5
mΩ
Rth(c-s)
per module
0.02
0.038
K/W
Ms
to heat sink M6
3
5
Nm
Mt
to terminals M6
2.5
5
Nm
Nm
w
325
g
SEMITRANS®3
GB
IGBT4 Modules
SKM200GB12E4
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x ICNOM
• Soft switching 4. Generation CAL
diode (CAL4)
Typical Applications
• AC inverter drives
•UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°


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