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SKM200GB12E4_0906 Datasheet(PDF) 2 Page - Semikron International |
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SKM200GB12E4_0906 Datasheet(HTML) 2 Page - Semikron International |
2 / 5 page SKM200GB12E4 2 Rev. 2 – 16.06.2009 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF =200 A VGE =0V chip Tj =25°C 2.2 2.52 V Tj = 150 °C 2.15 2.47 V VF0 Tj =25°C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V rF Tj =25°C 4.5 5.1 mΩ Tj = 150 °C 6.3 6.8 mΩ IRRM IF =200 A di/dtoff = 4450 A/µs VGE =±15 V VCC = 600 V Tj = 150 °C 174 A Qrr Tj = 150 °C 33 µC Err Tj = 150 °C 13 mJ Rth(j-c) per diode 0.26 K/W Module LCE 15 20 nH RCC'+EE' terminal-chip TC =25°C 0.25 mΩ TC = 125 °C 0.5 mΩ Rth(c-s) per module 0.02 0.038 K/W Ms to heat sink M6 3 5 Nm Mt to terminals M6 2.5 5 Nm Nm w 325 g SEMITRANS®3 GB IGBT4 Modules SKM200GB12E4 Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting to 6 x ICNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives •UPS • Electronic welders at fsw up to 20 kHz Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° |
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