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SKT8 Datasheet(PDF) 1 Page - Semikron International

Part # SKT8
Description  THYRISTOR
Download  2 Pages
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Manufacturer  SEMIKRON [Semikron International]
Direct Link  http://www.semikron.com
Logo SEMIKRON - Semikron International

SKT8 Datasheet(HTML) 1 Page - Semikron International

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SKT 8,9 Qu ZG bond.
© by SEMIKRON
Rev. 0 – 19.02.2010
1
THYRISTOR
SKT
IT(DC) = 105 A
VRRM = 1600 V
Size: 8,9 mm x 8,9 mm
Central gate
SKT 8,9 Qu ZG bond.
Features
• high current density due to double
mesa technology
• high surge current
• compatible to thick wire bonding
• compatible to all standard solder
processes
Typical Applications*
• conrolled rectifier circuits
• solid state relays
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
VRRM
Tj =25°C, IR =0.2 mA
1600
V
VDRM
Tj =25°C, ID =0.2 mA
1600
V
IT(AV)
Tc =80°C, Tj = 130 °C
80
A
ITSM
Tj = 130 °C, 10 ms, sin 180°
1000
A
i2t
Tj = 130 °C, 10 ms, sin 180°
5000
A2s
Tjmax
130
°C
Electrical Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
VT
Tj = 130 °C, IT =75A
1.2
V
VT(TO)
Tj = 130 °C
0.85
V
rT
Tj = 130 °C
4.8
mΩ
IGT
Tj =25°C
100
mA
VGT
Tj =25°C
1.98
V
IGD
Tj = 115 °C
6mA
VGD
Tj = 130 °C
0.25
V
IH
Tj =25°C
220
mA
IL
Tj =25°C
440
mA
Dynamic Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
tq
Tj = 130 °C
150
µs
(di/dt)cr
Tj = 130 °C
50
A/µs
(dv/dt)cr
Tj = 130 °C
1000
V/µs
Thermal Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Tj
-40
130
°C
Tstg
-40
130
°C
Tsolder
255
°C
Rth(j-c)
Semipack 1 assembly
0.36
K/W
Mechanical Characteristics
Symbol
Conditions
Values
Unit
Raster
size
8.9 x 8.9
mm2
Area total
79.2
mm2
Anode
solderable (Ag/Ni)
Gate and
Cathode
bondable (Al)
Wire bond
Al,diameter ≤ 500µm
Package
tray
Chips /
Package
64
pcs


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