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IDY15S120 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IDY15S120 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 10 page 2nd Generation thinQ!™ SiC Schottky Diode IDY15S120 Electrical characteristics diagrams Final Data Sheet 7 Rev. 2.0, 2011-02-28 5 Electrical characteristics diagrams Electrical characteristics, at T j=25 °C, unless otherwise specified. Table 7 Power dissipation Typ. forward characteristic (per leg) P tot = f(TC); parameter: RthJC(max) I F=f(VF); tp=400 µs; parameter: Tj ; IF=f(TC); per device the values double Table 8 Diode forward current (per leg) Diode forward current (per device) T j≤ 175 °C; parameter: RthJC(max) ; VF (max); D=tP /T T j≤ 175 °C; parameter: RthJC(max) ; VF (max); D=tP /T |
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