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SEMIX653GAL176HDS Datasheet(PDF) 2 Page - Semikron International

Part # SEMIX653GAL176HDS
Description  Trench IGBT Modules
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Manufacturer  SEMIKRON [Semikron International]
Direct Link  http://www.semikron.com
Logo SEMIKRON - Semikron International

SEMIX653GAL176HDS Datasheet(HTML) 2 Page - Semikron International

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SEMiX653GAL176HDs
2
Rev. 1 – 24.06.2010
© by SEMIKRON
td(on)
VCC = 1200 V
IC =450 A
RG on =3.6 Ω
RG off =3.6 Ω
Tj = 125 °C
290
ns
tr
Tj = 125 °C
90
ns
Eon
Tj = 125 °C
300
mJ
td(off)
Tj = 125 °C
975
ns
tf
Tj = 125 °C
190
ns
Eoff
Tj = 125 °C
180
mJ
Rth(j-c)
per IGBT
0.054
K/W
Inverse diode
VF = VEC
IF =450 A
VGE =0V
chip
Tj =25°C
1.7
1.90
V
Tj = 125 °C
1.7
1.9
V
VF0
Tj =25°C
0.9
1.1
1.3
V
Tj = 125 °C
0.7
0.9
1.1
V
rF
Tj =25°C
1.3
1.3
1.3
mΩ
Tj = 125 °C
1.8
1.8
1.8
mΩ
IRRM
IF =450 A
di/dtoff = 4200 A/µs
VGE =-15 V
VCC = 1200 V
Tj = 125 °C
380
A
Qrr
Tj = 125 °C
130
µC
Err
Tj = 125 °C
73
mJ
Rth(j-c)
per diode
0.11
K/W
Freewheeling diode
VF = VEC
IF =450 A
VGE =0V
chip
Tj =25°C
1.7
1.9
V
Tj = 125 °C
1.7
1.9
V
VF0
Tj =25°C
0.9
1.1
1.3
V
Tj = 125 °C
0.7
0.9
1.1
V
rF
Tj =25°C
1.3
1.3
1.3
mΩ
Tj = 125 °C
1.8
1.8
1.8
mΩ
IRRM
IF =450 A
di/dtoff = 4200 A/µs
VGE =-15 V
VCC = 1200 V
Tj = 125 °C
380
A
Qrr
Tj = 125 °C
130
µC
Err
Tj = 125 °C
73
mJ
Rth(j-c)
per diode
0.11
K/W
Module
LCE
20
nH
RCC'+EE'
res., terminal-chip
TC =25°C
0.7
mΩ
TC = 125 °C
1mΩ
Rth(c-s)
per module
0.04
K/W
Ms
to heat sink (M5)
3
5
Nm
Mt
to terminals (M6)
2.5
5
Nm
Nm
w
300
g
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
K
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
SEMiX® 3s
GAL
Trench IGBT Modules
SEMiX653GAL176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
•VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
•UPS
• Electronic welders


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