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SEMIX653GAL176HDS Datasheet(PDF) 2 Page - Semikron International |
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SEMIX653GAL176HDS Datasheet(HTML) 2 Page - Semikron International |
2 / 5 page SEMiX653GAL176HDs 2 Rev. 1 – 24.06.2010 © by SEMIKRON td(on) VCC = 1200 V IC =450 A RG on =3.6 Ω RG off =3.6 Ω Tj = 125 °C 290 ns tr Tj = 125 °C 90 ns Eon Tj = 125 °C 300 mJ td(off) Tj = 125 °C 975 ns tf Tj = 125 °C 190 ns Eoff Tj = 125 °C 180 mJ Rth(j-c) per IGBT 0.054 K/W Inverse diode VF = VEC IF =450 A VGE =0V chip Tj =25°C 1.7 1.90 V Tj = 125 °C 1.7 1.9 V VF0 Tj =25°C 0.9 1.1 1.3 V Tj = 125 °C 0.7 0.9 1.1 V rF Tj =25°C 1.3 1.3 1.3 mΩ Tj = 125 °C 1.8 1.8 1.8 mΩ IRRM IF =450 A di/dtoff = 4200 A/µs VGE =-15 V VCC = 1200 V Tj = 125 °C 380 A Qrr Tj = 125 °C 130 µC Err Tj = 125 °C 73 mJ Rth(j-c) per diode 0.11 K/W Freewheeling diode VF = VEC IF =450 A VGE =0V chip Tj =25°C 1.7 1.9 V Tj = 125 °C 1.7 1.9 V VF0 Tj =25°C 0.9 1.1 1.3 V Tj = 125 °C 0.7 0.9 1.1 V rF Tj =25°C 1.3 1.3 1.3 mΩ Tj = 125 °C 1.8 1.8 1.8 mΩ IRRM IF =450 A di/dtoff = 4200 A/µs VGE =-15 V VCC = 1200 V Tj = 125 °C 380 A Qrr Tj = 125 °C 130 µC Err Tj = 125 °C 73 mJ Rth(j-c) per diode 0.11 K/W Module LCE 20 nH RCC'+EE' res., terminal-chip TC =25°C 0.7 mΩ TC = 125 °C 1mΩ Rth(c-s) per module 0.04 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm Nm w 300 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K Characteristics Symbol Conditions min. typ. max. Unit SEMiX® 3s GAL Trench IGBT Modules SEMiX653GAL176HDs Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives •UPS • Electronic welders |
Similar Part No. - SEMIX653GAL176HDS_10 |
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Similar Description - SEMIX653GAL176HDS_10 |
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