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IPP100N04S4-02 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPP100N04S4-02 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS ®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current 1) I D T C=25°C, V GS=10V 100 A T C=100°C, V GS=10V 2) 100 Pulsed drain current 2) I D,pulse T C=25°C 400 Avalanche energy, single pulse 2) E AS I D=50A 280 mJ Avalanche current, single pulse I AS - 100 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 115 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Value V DS 40 V R DS(on),max (SMD version) 2.4 m Ω I D 100 A Product Summary PG-TO220-3-1 PG-TO262-3-1 PG-TO263-3-2 Type Package Marking IPB100N04S4-02 PG-TO263-3-2 4N04H2 IPI100N04S4-02 PG-TO262-3-1 4N04H2 IPP100N04S4-02 PG-TO220-3-1 4N04H2 Rev. 1.0 page 1 2010-04-13 |
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