BUL52 datasheet(2/2 Pages) SEME-LAB

Part #	BUL52

Description	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

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Manufacturer	SEME-LAB [Seme LAB]

Direct Link	http://www.semelab.co.uk

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2 / 2 page

BUL52B

LAB

SEME

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 3/95

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCEO(sus)

V(BR)CBO

V(BR)EBO

ICBO

ICEO

IEBO

hFE*

VCE(sat)*

VBE(sat)*

ft

Cob

Collector – Emitter Sustaining Voltage

Collector – Base Breakdown Voltage

Emitter – Base Breakdown Voltage

Collector – Base Cut–Off Current

Collector – Emitter Cut–Off Current

Emitter Cut–Off Current

DC Current Gain

Collector – Emitter Saturation Voltage

Base – Emitter Saturation Voltage

Transition Frequency

Output Capacitance

400

800

10

100

10

100

20

30

15

25

45

10

15

5

0.05

0.1

0.2

0.15

0.3

0.5

0.8

1.0

0.9

1.1

0.95

1.2

20

40

V

µA

—

V

MHz

pF

IC = 10mA

IC = 1mA

IE = 1mA

VCB = 800V

TC = 125°C

IB = 0

VCE = 400V

VEB = 9V

IC = 0

TC = 125°C

IC = 100mA

VCE = 5V

IC = 1A

VCE = 5V

IC = 3A

VCE = 1V

TC = 125°C

IC = 100mA

IB = 20mA

IC = 1A

IB = 0.2A

IC = 2A

IB = 0.4A

IC = 3A

IB = 0.6A

IC = 1A

IB = 0.2A

IC = 2A

IB = 0.4A

IC = 3A

IB = 0.6A

IC = 0.2A

VCE = 4V

VCB = 20V

f = 1MHz

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

* Pulse test tp = 300µs , δ < 2%

ELECTRICAL CHARACTERISTICS

DYNAMIC CHARACTERISTICS

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