NVTFS5811NLTWG datasheet(3/6 Pages) ONSEMI

Part #	NVTFS5811NLTWG

Description	Power MOSFET 40 V, 6.7 m, 40 A, Single N?묬hannel Small Footprint

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Manufacturer	ONSEMI [ON Semiconductor]

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NVTFS5811NL

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TYPICAL CHARACTERISTICS

0

10

20

30

40

50

60

70

80

90

100

012

345

Figure 1. On−Region Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

10 V

3.4 V

VGS = 5 V

4.2 V

4.6 V

3.8 V

3.6 V

3.0 V

3.2 V

4.0 V

TJ = 25°C

0

10

20

30

40

50

60

70

80

123

4

5

VDS ≥ 10 V

TJ = 25°C

TJ = −55°C

TJ = 125°C

Figure 2. Transfer Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (V)

0.004

0.006

0.008

0.010

0.012

0.014

0.016

24

6

8

10

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID = 20 A

TJ = 25°C

0.002

0.004

0.006

0.008

0.010

0.012

5

1015 2025303540 4550556065 70

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (A)

VGS = 4.5 V

TJ = 25°C

VGS = 10 V

0.60

0.80

1.00

1.20

1.40

1.60

1.80

2.00

−50

−25

0

25

50

75

100 125 150

175

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

VGS = 10 V

ID = 20 A

100

1000

10000

100000

10

20

30

40

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 125°C

TJ = 150°C

VGS = 0 V

Similar Part No. - NVTFS5811NLTWG

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NVTFS5811NLTWG	126Kb / 6P	Power MOSFET May, 2013 ??Rev. 2

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