BUL54BFI

LAB

SEME

Prelim. 3/95

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

HIGH SPEED NPN

SILICON POWER TRANSISTOR

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE

• FAST SWITCHING

• HIGH ENERGY RATING

• MILITARY AND HI–REL VERSIONS

AVAILABLE IN METAL AND CERAMIC

SURFACE MOUNT PACKAGES

Designed for use in

electronic ballast applications

FEATURES

• Multi–base for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

• Triple Guard Rings for improved control of

high voltages.

Collector – Base Voltage

Continuous Collector Current

Peak Collector Current

Base Current

Operating and Storage Temperature Range

800V

400V

10V

5A

8A

3A

30W

–55 to +150°C

MECHANICAL DATA

Dimensions in mm

12 3

10.2

3.6 Dia.

1.3

0.85

2.54 2.54

ISOLATED TO220

Pin 1 – Base

Pin 2 – Collector

Pin 3 – Emitter