NTTFS4930NTWG datasheet(1/7 Pages) ONSEMI

Part #	NTTFS4930NTWG

Description	Power MOSFET 30 V, 23 A, Single N?묬hannel, 8FL Notebook Battery Management

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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April, 2011 − Rev. 0

1

Publication Order Number:

NTTFS4930N/D

NTTFS4930N

Power MOSFET

30 V, 23 A, Single N−Channel, m8FL

Features

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• DC−DC Converters

• Power Load Switch

• Notebook Battery Management

• Motor Control

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA (Note 1)

Steady

State

TA = 25°C

ID

7.2

A

TA = 85°C

5.2

Power Dissipation RqJA

(Note 1)

TA = 25°C

PD

2.06

W

Continuous Drain

Current RqJA ≤ 10 s

(Note 1)

TA = 25°C

ID

9.6

A

TA = 85°C

6.9

Power Dissipation

RqJA ≤ 10 s (Note 1)

TA = 25°C

PD

3.61

W

Continuous Drain

Current RqJA (Note 2)

TA = 25°C

ID

4.5

A

TA = 85°C

3.2

Power Dissipation

RqJA (Note 2)

TA = 25°C

PD

0.79

W

Continuous Drain

Current RqJC (Note 1)

TC = 25°C

ID

23

A

TC = 85°C

16

Power Dissipation

RqJC (Note 1)

TC = 25°C

PD

20.2

W

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

92

A

Operating Junction and Storage Temperature

TJ,

Tstg

−55 to

+150

°C

Source Current (Body Diode)

IS

25

A

Drain to Source dV/dt

dV/dt

6.0

V/ns

Single Pulse Drain−to−Source Avalanche Energy

(TJ = 25°C, VDD = 50 V, VGS = 10 V,

IL = 12 Apk, L = 0.1 mH, RG = 25 W)

EAS

7.2

mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

ORDERING INFORMATION

http://onsemi.com

Device

Package

Shipping†

V(BR)DSS

RDS(on) MAX

ID MAX

30 V

23 mW @ 10 V

23 A

N−Channel MOSFET

D (5−8)

S (1,2,3)

G (4)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

WDFN8

(m8FL)

CASE 511AB

MARKING DIAGRAM

30 mW @ 4.5 V

NTTFS4930NTAG

WDFN8

(Pb−Free)

1500/Tape & Reel

(Note: Microdot may be in either location)

1

4930

= Specific Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

1

NTTFS4930NTWG

WDFN8

(Pb−Free)

5000/Tape & Reel

4930

AYWWG

G

D

S

G

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